PART |
Description |
Maker |
M12L64322A-7BG |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Mem...
|
HY57V161610ET-10 HY57V161610ET-15 HY57V161610ET-55 |
2 Banks x 512K x 16 Bit Synchronous DRAM
|
Hynix Semiconductor Inc.
|
A43L0616BV A43L0616B A43L0616BV-6 A43L0616BV-6F A4 |
512K X 16 Bit X 2 Banks Synchronous DRAM
|
AMIC Technology
|
A43L0616A A43L0616AV A43L0616AV-5 A43L0616AV-55 A4 |
512K X 16 Bit X 2 Banks Synchronous DRAM
|
AMICC[AMIC Technology]
|
IC42S16102-7TI |
512K x 16 Bit x 2 Banks (16-MBIT) SDRAM
|
Integrated Circuit Solution Inc
|
IC42S16101-6T IC42S16101-6TI IC42S16101-7TG IC42S1 |
512K x 16 Bit x 2 Banks (16-MBIT) SDRAM 12k × 16位2银行6兆)内存
|
Rohm Co., Ltd. Electronic Theatre Controls, Inc. Atmel, Corp.
|
ADS4616A4A ADS4616A4A-5 ADS4616A4A-6 ADS4616A4A-7 |
Synchronous DRAM(512K X 16 Bit X 2 Banks) 同步DRAM(为512k × 16位2组)
|
ADATA Technology Co., Ltd. A-DATA[A-Data Technology]
|
K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz 64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
W986432AH W986432AHA1 |
512K x 4 BANKS x 32 BITS SDRAM 512K x 4 BANKS x 32 BITS SDRAM From old datasheet system
|
Winbond Electronics WINBOND[Winbond]
|
ADS7608A4A ADS7608A4A-5 ADS7608A4A-55 ADS7608A4A-6 |
Synchronous DRAM(4M X 8 Bit X 4 Banks) Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM4米8位4银行 Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM米8位4银行 133 Mhz LVTTL synchronous DRAM, 4 M x 8 bit x 4 banks
|
ADATA Technology Co., Ltd. A-DATA[A-Data Technology]
|
HY57V161610ET-7I HY57V161610ET-10I HY57V161610ET-1 |
SDRAM - 16Mb 2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
|
HYNIX[Hynix Semiconductor] Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|